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Remnant magnetoresistance effect at the intersection of two ferromagnetic (Ga,Mn)As nanowires

Author

  • Tomasz Andrearczyk
  • Tadeusz Wosinski
  • Tadeusz Figielski
  • Andrzej Makosa
  • Iwona Krogulec
  • Jerzy Wrobel
  • Janusz Sadowski

Summary, in English

Cross-like nanostructures composed of two perpendicular ferromagnetic (Ga,Mn)As nanowires were fabricated using electron-beam lithography patterning. Nanostructures of different orientations with respect to the crystallographic axes of the parent (Ga,Mn)As epitaxial layer were studied. Electrical resistance of individual nanowires as a function of applied magnetic field were investigated at low temperatures. Low-field magnetoresistance (MR) of the nanowires exhibits hysteresis-like behaviour and related remnant resistance in zero magnetic field. These effects are explained in terms of magnetic domain walls (DWs) pinned at the wires intersection, which contribute to the wire resistance. The DW resistivity, which depends on the degree of spin misalignment in the wall, has been determined to be of the order of 1 Omega mu m(2). High-field MR has, in turn, allowed determining the lithography-induced anisotropy field for the nanowires of different crystallographic orientations. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Department/s

Publishing year

2011

Language

English

Pages

1587-1591

Publication/Series

Physica Status Solidi. B: Basic Research

Volume

248

Issue

7

Document type

Journal article

Publisher

John Wiley & Sons Inc.

Topic

  • Natural Sciences
  • Physical Sciences

Keywords

  • domain walls
  • ferromagnetic semiconductors
  • GaMnAs
  • magnetoresistance
  • nanostructures

Status

Published

ISBN/ISSN/Other

  • ISSN: 0370-1972