Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes

Summary, in English

We have studied GaP/GaAs/GaP and GaAsxP1-x/GaAs/GaAsxP1-x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1-x/GaAs/GaAsxP1-x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5.

• Author: Lars-Erik Wernersson; Magnus Borgström; Boel Gustafson; Anders Gustafsson; I Pietzonka; Mats-Erik Pistol; T Sass; Werner Seifert; Lars Samuelson
• Department/s: Solid State Physics; Department of Electrical and Information Technology
• Publishing year: 2002
• Language: English
• Pages: 1841-1843
• Publication/Series: Applied Physics Letters
• Volume: 80
• Issue: 10
• Links: http://dx.doi.org/10.1063/1.1459113
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Condensed Matter Physics; Electrical Engineering, Electronic Engineering, Information Engineering
• Status: Published
• ISBN/ISSN/Other: ISSN: 0003-6951