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Magnetization of ultrathin (Ga,Mn)As layers

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Author

  • R Mathieu
  • BS Sorensen
  • Janusz Sadowski
  • U Sodervall
  • J Kanski
  • P Svedlindh
  • PE Lindelof
  • D Hrabovsky
  • E Vanelle

Summary, in English

Kerr rotation and superconducting quantum interference device magnetometry measurements were performed on ultrathin (Ga0.95Mn0.05)As layers. The thinner layers (below 250 A) exhibit magnetic properties different than those of thicker ones, associated with different microstructure, and some degree of inhomogeneity. The temperature dependence of the field-cooled magnetization of the layers is recorded after successive low temperature annealings. While the Curie temperature of the thicker layer (250 A) is nearly unchanged, the critical temperature of the thinner layers is enhanced by more than 23 K after two annealings. Secondary ion mass spectrometry experiments on similar layers show that Mn is displaced upon annealing. The results are discussed considering a possible segregation of substitutional and interstitial Mn atoms at the surface of the (Ga,Mn)As layers.

Department/s

Publishing year

2003

Language

English

Publication/Series

Physical Review B (Condensed Matter and Materials Physics)

Volume

68

Issue

18: 184421

Document type

Journal article

Publisher

American Physical Society

Topic

  • Physical Sciences
  • Natural Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 1098-0121