Degenerate p-doping of InP nanowires for large area tunnel diodes
Author
Summary, in English
We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]
Publishing year
2011
Language
English
Publication/Series
Applied Physics Letters
Volume
99
Issue
25
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Chemical Sciences
- Condensed Matter Physics
- Nano Technology
Status
Published
ISBN/ISSN/Other
- ISSN: 0003-6951