Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
Author
Summary, in English
We demonstrate metalorganic vapor phase epitaxy of InAs1-xSbx nanowires (x=0.08-0.77) for applications in high-speed electronics and long-wavelength optical devices. The composition of the InAsSb nanowires and InAsSb epilayers on the same sample is independently determined using lab-setup high resolution x-ray diffraction, by making use of the size-dependent in-plane broadening of the nanowire Bragg peak. We find that the incorporation of Sb into the nanowires is significantly higher than for planar epitaxy under the same growth conditions. Thermodynamic calculations indicate that this is due to a dramatically decreased effective V/III ratio at the particle/nanowire interface. (C) 2011 American Institute of Physics. (C) [doi: 10.1063/1.3566980]
Department/s
Publishing year
2011
Language
English
Publication/Series
Applied Physics Letters
Volume
98
Issue
11
Full text
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Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Status
Published
Research group
- Nano
ISBN/ISSN/Other
- ISSN: 0003-6951