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Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions

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Author

Summary, in English

We present the effect of annealing temperature and annealing time on InAs/InP site-controlled quantum dot growth. Electron beam pre-patterning forms carbon nano-deposits at the InP surface, which then can be used as growth masks to form nano-holes at the surface. By only annealing of the patterned InP surface under an arsine ambient, As/P exchange reactions produce material sufficient for selective dot nucleation in the holes at the surface

Publishing year

2002

Language

English

Publication/Series

7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science

Document type

Conference paper

Publisher

Lund University

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • selective dot nucleation
  • arsine ambient
  • InAs-InP
  • nanoholes
  • patterned InP surface
  • InAs quantum dots
  • As/P exchange reactions
  • annealing temperature
  • annealing time
  • InAs/InP site controlled quantum dot growth
  • electron beam prepatterning forms
  • carbon nanodeposits
  • growth masks
  • InP surface

Conference name

Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)

Conference date

2002-06-24 - 2002-06-28

Conference place

Malmö, Sweden

Status

Published