Photoemission study of GaAs (100) grown at low temperature
Author
Summary, in English
GaAs(100) layers grown by low-temperature (LT) molecular beam epitaxy were studied by means of valence-band and core-level photoelectron spectroscopy. Small differences were found between valence-band spectra from the LT layers and corresponding layers grown at high temperature. In the Ga 3d spectra a new component was found in the LT-GaAs. The relative intensity of this component was found to be practically constant with varying probing depth. It is proposed that this component represents sites coordinated to the five-atom As clusters formed at As-Ga antisites. This interpretation implies a higher density of antisite defects in the near-surface region than typically found in the bulk.
Department/s
Publishing year
2002
Language
English
Publication/Series
Physical Review B (Condensed Matter and Materials Physics)
Volume
65
Issue
11
Document type
Journal article
Publisher
American Physical Society
Topic
- Natural Sciences
- Physical Sciences
Status
Published
ISBN/ISSN/Other
- ISSN: 1098-0121