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The ratio of interstitial to substitutional site occupation by Mn atoms in GaAs estimated by EXAFS

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Author

  • K. Lawniczak-Jablonska
  • J. Libera
  • A. Wolska
  • M. T. Klepka
  • R. Jakiela
  • Janusz Sadowski

Summary, in English

The location of Mn atoms in the MBE-grown layers of Ga1-xMnxAs is correlated with all important physical properties of the final material, therefore, it is the subject of many studies. It is known that in the as-grown MBE samples the Mn atoms occupy substitutional and interstitial positions but the proportion between these sites is not easy to find. A powerful tool for this kind of study is XAS as it probes the local atomic order and the electronic structure. The EXAFS data analysis was performed considering superposition of possible Mn locations. This allowed for determination of the distribution of Mn between those two lattice sites. (C) 2009 Elsevier Ltd. All rights reserved.

Department/s

Publishing year

2009

Language

English

Pages

80-85

Publication/Series

Radiation Physics and Chemistry

Volume

78

Document type

Conference paper

Publisher

Elsevier

Topic

  • Natural Sciences
  • Physical Sciences

Keywords

  • Semiconductors
  • Interstitial
  • Spintronics
  • Local order
  • X-ray absorption
  • Gallium arsenide
  • EXAFS
  • Manganese

Conference name

9th International School and Symposium on Synchrotron Radiation in Natural Science (ISSRNS-9)

Conference date

2008-06-15 - 2008-06-20

Conference place

Ameliowka, Poland

Status

Published

ISBN/ISSN/Other

  • ISSN: 0969-806X