Three-dimensional integrated resonant tunneling transistor with multiple peaks
Author
Summary, in English
A resonant tunneling transistor was manufactured by integrating a self-aligned metallic gate 30 nm above and 100 nm below resonant tunneling diodes. The Schottky depletion around the gate controls the current to a confined vertical channel with a conduction area in the range of 100x100 nm. Due to the three-dimensional asymmetric placement of the gate with respect to the tunneling diodes, modulation of both the peak voltage and peak current was achieved.
Publishing year
2002
Language
English
Pages
1905-1907
Publication/Series
Applied Physics Letters
Volume
81
Issue
10
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Other
- ISSN: 0003-6951