Electrical properties of self-assembled branched InAs nanowire junctions

Summary, in English

We investigate electrical properties of self-assembled branched InAs nanowires. The branched nanowires are catalytically grown using chemical beam epitaxy, and three-terminal nanoelectronic devices are fabricated from the branched nanowires using electron-beam lithography. We demonstrate that, in difference from conventional macroscopic junctions, the fabricated self-assembled nanowire junction devices exhibit tunable nonlinear electrical characteristics and a signature of ballistic electron transport. As an example of applications, we demonstrate that the self-assembled three-terminal nanowire junctions can be used to implement the functions of frequency mixing, multiplication, and phase-difference detection of input electrical signals at room temperature. Our results suggest a wide range of potential applications of branched semiconductor nanostructures in nanoelectronics.

• Author: Dmitry Suyatin; Jie Sun; Andreas Fuhrer; Daniel Wallin; Linus Fröberg; Lisa Karlsson; Ivan Maximov; Reine Wallenberg; Lars Samuelson; Hongqi Xu
• Department/s: Solid State Physics; Centre for Analysis and Synthesis
• Publishing year: 2008
• Language: English
• Pages: 1100-1104
• Publication/Series: Nano Letters
• Volume: 8
• Issue: 4
• Links: http://dx.doi.org/10.1021/nl073193y
• Document type: Journal article
• Publisher: The American Chemical Society (ACS)
• Topic: Nano Technology
• Status: Published
• ISBN/ISSN/Other: ISSN: 1530-6992