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Observation of vacancies in Ga1-xMnxAs with positron annihilation spectroscopy

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Author

  • F Tuomisto
  • J Slotte
  • K Saarinen
  • Janusz Sadowski

Summary, in English

Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8 mum thick low temperature MBE GaMnAs layers with Mn content 0.5-5% and different As-2 partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As-2 partial pressure.

Department/s

Publishing year

2003

Language

English

Pages

601-606

Publication/Series

Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics

Volume

103

Issue

6

Document type

Journal article

Publisher

Institute of Physics, Polish Academy of Sciences

Topic

  • Physical Sciences
  • Natural Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 0587-4246