Photon mapping of quantum dots using a scanning tunneling microscope
Author
Summary, in English
Scanning tunneling microscopy (STM) and scanning tunneling luminescence (STL) have been used to investigate the geometric and optical properties of individual self-assembled InP quantum dots overgrown with a thin layer of GaInP. STL spectra and monochromatic photon maps were used to correlate the surface topography with the optical properties of single quantum dots. We find a spatial resolution of about 10 nm in the photon maps. Theoretical emission spectra were calculated by six-band k.p theory using a realistic shape of the dot as well as of the cap layer. The calculated emission spectrum of a single dot is in good agreement with the experimental findings. (C) 2002 American Institute of Physics.
Department/s
Publishing year
2002
Language
English
Pages
4443-4445
Publication/Series
Applied Physics Letters
Volume
81
Issue
23
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Other
- ISSN: 0003-6951