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Ion-Implantation Control of Ferromagnetism in (Ga,Mn)As Epitaxial Layers

På svenska

Author

  • O. Yastrubchak
  • J. Z. Domagala
  • Janusz Sadowski
  • M. Kulik
  • J. Zuk
  • A. L. Toth
  • R. Szymczak
  • T. Wosinski

Summary, in English

Epitaxial layers of (Ga,Mn)As ferromagnetic semiconductor have been subjected to low-energy ion implantation by applying a very low fluence of either chemically active, oxygen ions or inactive ions of neon noble gas. Several complementary characterization techniques have been used with the aim of studying the effect of ion implantation on the layer properties. Investigation of their electrical and magnetic properties revealed that implantation with either O or Ne ions completely suppressed both the conductivity and ferromagnetism in the layers. On the other hand, Raman spectroscopy measurements evidenced that O ion implantation influenced optical properties of the layers noticeably stronger than did Ne ion implantation. Moreover, structural modifications of the layers caused by ion implantation were investigated using high-resolution x-ray diffraction technique. A mechanism responsible for ion-implantation-induced suppression of the conductivity and ferromagnetism in (Ga,Mn)As layers, which could be applied as a method for tailoring nanostructures in the layers, is discussed in terms of defects created in the layers by the two implanted elements.

Department/s

Publishing year

2010

Language

English

Pages

794-798

Publication/Series

Journal Of Electronic Materials

Volume

39

Issue

6

Document type

Conference paper

Publisher

Springer

Topic

  • Physical Sciences
  • Natural Sciences

Keywords

  • Raman spectroscopy
  • high-resolution x-ray diffraction
  • ion implantation
  • Ferromagnetic semiconductor
  • Mn)As
  • (Ga
  • SQUID
  • magnetometry

Conference name

13th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP XIII)

Conference date

2009-09-13 - 2009-09-17

Status

Published

ISBN/ISSN/Other

  • ISSN: 1543-186X
  • ISSN: 0361-5235