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A photoelectron spectroscopy and photon stimulated desorption study of H2O on Si(100) 2×1

Author

Summary, in English

We have studied H2O adsorption on the Si(100) surface using photoelectron spectroscopy to record Si valence bands and Si 2p core level spectra; and photon stimulated desorption to record Si 2p edge total electron yield and H + -ion yield spectra. We assign the valence-band H2O induced peaks at EB=6.3 and 11.2 eV to the Si–OH and to the O–H bonds, respectively. The H2O dosed Si 2p core level spectrum exhibits two H2O induced equal intensity surface peaks with surface core level shifts of +0.25 and +1.00 eV that we assign to surface Si atoms in the Si–H and the Si–OH bonds, respectively. We interpret the features in the Si 2p edge H + -ion yield spectrum as ion desorption from SiO2 at surface defect minority sites. We conclude that H2O adsorbs dissociatively as H and OH radicals on the Si(100) 2×1 surface dimers and that there are defect minority sites on the surface where H2O adsorption causes SiO2 formation.

Publishing year

1987

Language

English

Pages

3321-3324

Publication/Series

Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films

Volume

5

Issue

6

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • SORPTIVE PROPERTIES
  • SILICON
  • WATER
  • PHOTOELECTRON SPECTROSCOPY
  • DESORPTION
  • HYDROXYL RADICALS
  • IMPURITY STATES

Status

Published

Research group

  • Electromagnetic theory

ISBN/ISSN/Other

  • ISSN: 1520-8559