The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Growth and characterization of single crystal semiconductor nanowires

Author

Summary, in English

Nanowire technology allows a bottom-up approach towards fabricating extremely small devices with negligible surface damage and with very high materials quality. The control of position, dimensions and formation of abrupt heterostructures will be described and examples of electronic and photonic devices can be created by this approach

Publishing year

2006

Language

English

Pages

106-107

Publication/Series

2006 IEEE LEOS Annual Meeting Conference

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics

Keywords

  • photonic device
  • electronic device
  • single crystal semiconductor nanowires growth
  • semiconductor nanowires characterization

Conference name

2006 IEEE LEOS Annual Meeting Conference

Conference date

2006-10-29 - 2006-11-02

Conference place

Montreal, Que., Canada

Status

Published

ISBN/ISSN/Other

  • ISBN: 0-7803-9555-7