Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations

Summary, in English

Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases. (C) 2011 Elsevier B.V. All rights reserved.

• Author: J. J. K. Lang; P. Laukkanen; M. P. J. Punkkinen; M. Ahola-Tuomi; M. Kuzmin; V. Tuominen; J. Dahl; M. Tuominen; R. E. Perala; Karina Schulte; Johan Adell; J. Sadowski; J. Kanski; M. Guina; M. Pessa; K. Kokko; B. Johansson; L. Vitos; I. J. Vayrynen
• Department/s: MAX IV Laboratory
• Publishing year: 2011
• Language: English
• Pages: 883-888
• Publication/Series: Surface Science
• Volume: 605
• Issue: 9-10
• Links: http://dx.doi.org/10.1016/j.susc.2011.01.034
• Document type: Journal article
• Publisher: Elsevier
• Topic: Natural Sciences; Physical Sciences
• Keywords: Ab initio calculations; Scanning-tunneling microscopy; Synchrotron; radiation photoelectron spectroscopy; Surface reconstruction; Gallium-arsenide (GaAs); Indium-arsenide (InAs); Single crystal surfaces
• Status: Published
• ISBN/ISSN/Other: ISSN: 0039-6028