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Interband transitions in InAs quantum dots in InP studied by photoconductivity and photoluminescence techniques

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Author

Summary, in English

We report on a detailed investigation of the interband optics of self-assembled InAs dots embedded in a matrix of InP. In photoconductivity (PC) measurements, we observe optical processes related to the dots and a wetting layer, band-to-band excitation of the InP barrier, as well as to an interesting As-related impurity. In particular, the PC measurements reveal the electronic structure of the dots and strongly suggest that an Auger effect is involved in forming the PC signal. Comparing the PC and photoluminescence (PL) signals, we observe that the fundamental transition is not observed in PC, which we interpret in terms of Pauli blocking due to electrons populating the ground state of the dots. In general, it is demonstrated that the PC technique is in many respects complementary to PL and gives additional insight into the electronic structure of quantum dots. (C) 2004 American Institute of Physics.

Publishing year

2004

Language

English

Pages

8007-8010

Publication/Series

Applied Physics Reviews

Volume

95

Issue

12

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 1931-9401