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Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings

Author

Summary, in English

We demonstrate a method for growth of GaP nanocrystals on Si(001), developed to avoid defects related to antiphase domain boundaries in the proximity of the GaP/Si interface. The technique is based on sub-mum-sized selective-area epitaxy of GaP on atomically flat Si in masked openings. We have used field-emission scanning electron microscopy together with transmission electron microscopy to illustrate the method with examples of monocrystalline GaP nanocrystals. The optical properties of the nanocrystals were investigated by low-temperature cathodoluminescence.

Publishing year

2002

Language

English

Pages

4546-4548

Publication/Series

Applied Physics Letters

Volume

80

Issue

24

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Chemical Sciences
  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951