Structural and magnetic properties of GaAs:(Mn,Ga)As granular layers
Author
Summary, in English
Granular GaAs:(Mn,Ga)As films were prepared by annealing the Ga0.92Mn0.08As/GaAs layer grown by the MBE method at low temperature. The annealing was performed at 500 or 600 degrees C. It is commonly accepted that this processing should result in formation of cubic zinc blende or hexagonal MnAs inclusions depending on the temperature. We demonstrate that such a priory assumption is not justified. The kind of formed inclusions depends not only on the annealing temperature but also on the number of defects and Mn atoms in the substitutional and interstitial positions in as grown sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Department/s
Publishing year
2011
Language
English
Pages
1609-1614
Publication/Series
Physica Status Solidi. B: Basic Research
Volume
248
Issue
7
Document type
Journal article
Publisher
John Wiley & Sons Inc.
Topic
- Natural Sciences
- Physical Sciences
Keywords
- granular material
- room temperature ferromagnetism
- spintronics
Status
Published
ISBN/ISSN/Other
- ISSN: 0370-1972