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A 90 nm CMOS 10 GHz beam forming transmitter

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Author

Summary, in English

A 10 GHz beam forming transmitter was designed in a 90 nm CMOS process. Two power amplifiers with independently controllable phase enable the beam forming. The controllable phase is accomplished by switching in binary weighted transistors fed by quadrature signals, which are generated by a quadrature voltage controlled oscillator followed by a buffer. The design contains seven differential on-chip inductors, and consumes a total of 44.0 mA from a 1.2 V supply. The desired output power of 5 dBm per power amplifier is delivered at a power added efficiency of 22 % for the power amplifier

Publishing year

2005

Language

English

Pages

375-378

Publication/Series

ISSCS 2005. International Symposium on Signals, Circuits and Systems

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • beam forming transmitter
  • CMOS process
  • power added efficiency
  • 44.0 mA
  • 90 nm
  • 10 GHz
  • quadrature signal
  • 1.2 V
  • on-chip inductor
  • quadrature voltage controlled oscillator
  • controllable phase
  • buffer
  • binary weighted transistor
  • power amplifier

Conference name

ISSCS 2005. International Symposium on Signals, Circuits and Systems

Conference date

2005-07-14 - 2005-07-15

Conference place

Iasi, Romania

Status

Published

Research group

  • Elektronikkonstruktion

ISBN/ISSN/Other

  • ISBN: 0-7803-9029-6