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Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

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Author

  • SE Andresen
  • BS Sorensen
  • FB Rasmussen
  • PE Lindelof
  • Janusz Sadowski
  • CM Guertler
  • JAC Bland

Summary, in English

We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band.

Department/s

Publishing year

2003

Language

English

Pages

3990-3994

Publication/Series

Applied Physics Reviews

Volume

94

Issue

6

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Natural Sciences
  • Physical Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 1931-9401