Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO2/Si(111))
Author
Summary, in English
Department/s
Publishing year
2002
Language
English
Pages
226-229
Publication/Series
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume
20
Issue
1
Document type
Conference paper
Publisher
American Vacuum Society
Topic
- Condensed Matter Physics
Keywords
- Ultrahigh vacuum scanning tunneling microscopy (UHVSTM)
Conference name
6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors
Conference date
2001-04-22 - 2001-04-26
Status
Published
ISBN/ISSN/Other
- ISSN: 1071-1023
- ISSN: 1520-8567