Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Summary, in English

Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729929]

• Author: Jesper Wallentin; Laura Barrutia Poncela; Anna M. Jansson; Kilian Mergenthaler; Martin Ek; Daniel Jacobsson; Reine Wallenberg; Knut Deppert; Lars Samuelson; Dan Hessman; Magnus Borgström
• Department/s: Solid State Physics; Centre for Analysis and Synthesis; NanoLund: Centre for Nanoscience
• Publishing year: 2012
• Language: English
• Publication/Series: Applied Physics Letters
• Volume: 100
• Issue: 25
• Full text: - 782 kB; Download statistics
• Links: http://dx.doi.org/10.1063/1.4729929
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Condensed Matter Physics; Chemical Sciences
• Status: Published
• ISBN/ISSN/Other: ISSN: 0003-6951