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Mass transport model for semiconductor nanowire growth

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Author

Summary, in English

We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs-Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures.

Publishing year

2005

Language

English

Pages

13567-13571

Publication/Series

The Journal of Physical Chemistry Part B

Volume

109

Issue

28

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 1520-5207