Formation of epitaxial MnBi layers on (Ga,Mn)As
Author
Summary, in English
The initial growth of MnBi on MnAs-terminated (GaMn)As is studied by means of synchrotron-based photoelectron spectroscopy. From analysis of surface core-level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well-defined 1×2 surface reconstruction of the MnAs surface is preserved for up to 2 ML of MnBi before clear surface degradation occurs. The MnBi layer appears to be free from intermixed As.
Department/s
Publishing year
2009
Language
English
Publication/Series
Physical Review B (Condensed Matter and Materials Physics)
Volume
80
Issue
7
Links
Document type
Journal article
Publisher
American Physical Society
Topic
- Physical Sciences
- Natural Sciences
Keywords
- semimagnetic semiconductors
- ferromagnetic materials
- surface reconstruction
- photoelectron spectra
- metallic epitaxial layers
- manganese compounds
- manganese alloys
- magnetic epitaxial layers
- magnetisation
- bismuth alloys
- gallium arsenide
- core levels
Status
Published
ISBN/ISSN/Other
- ISSN: 1098-0121