The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm

På svenska

Author

Summary, in English

A processing scheme for the fabrication of embedded W-GaAs contacts has been established and the resulting contact characteristics have been evaluated. The main advantage of these contacts is that they are stable during high-temperature epitaxial overgrowth. The fabrication scheme is based on a liftoff process with electron beam evaporation of tungsten and subsequent epitaxial overgrowth using metalorganic vapor phase epitaxy. Various methods were used to characterize the buried contacts. First, the structural properties of GaAs surrounding embedded W features, with widths down to 50 nm, were characterized by high-resolution transmission electron microscopy. Measurements of the conductivity in individual, buried wires were performed in order to study the influence of the overgrowth process on the properties of the tungsten. We also evaluated the current-voltage characteristics for macroscopic contacts, which revealed a clear dependence on processing parameters. Optimized processing conditions could thus be established under which limited contact degradation occurred during overgrowth. Finally, we used the overgrowth technique to perform a detailed investigation of the electrical and optical properties of floating-potential embedded nano-Schottky contacts by space-charge spectroscopy.

Publishing year

2002

Language

English

Pages

580-589

Publication/Series

Journal of Vacuum Science and Technology B

Volume

20

Issue

2

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 1520-8567