High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires

Summary, in English

We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm2 at 0.50 V, maximum peak current of 67 kA/cm2 at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.

• Author: Bahram Ganjipour; Anil Dey; Mattias Borg; Martin Ek; Mats-Erik Pistol; Kimberly Dick Thelander; Lars-Erik Wernersson; Claes Thelander
• Department/s: Solid State Physics; Department of Electrical and Information Technology; Centre for Analysis and Synthesis; NanoLund: Centre for Nanoscience
• Publishing year: 2011
• Language: English
• Pages: 4222-4226
• Publication/Series: Nano Letters
• Volume: 11
• Issue: 10
• Links: http://dx.doi.org/10.1021/nl202180b
• Document type: Journal article
• Publisher: The American Chemical Society (ACS)
• Topic: Nano Technology; Condensed Matter Physics
• Status: Published
• Research group: Nano; Digital ASIC
• ISBN/ISSN/Other: ISSN: 1530-6992