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Optically induced charge storage and current generation in InAs quantum dots

Author

Summary, in English

We report on optically induced charge storage effects and cur-rent generation in self-assembled InAs quantum dots embedded in an InP matrix. Illumination with photons of energy higher than about 0.86 eV efficiently loads the dots with a maximum of about 1 hole/dot. The spectral response at lower photon energy is strongly enhanced at elevated temperatures. We present a detailed balance model for the dots and discuss the thermally assisted optical excitation processes pertinent to hole accumulation. We also show that these processes make the dots act as nanometer-scaled temperature-dependent current generators.

Publishing year

2002

Language

English

Publication/Series

Physical Review B (Condensed Matter and Materials Physics)

Volume

65

Issue

7

Document type

Journal article

Publisher

American Physical Society

Topic

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 1098-0121