Optically induced charge storage and current generation in InAs quantum dots
Author
Summary, in English
We report on optically induced charge storage effects and cur-rent generation in self-assembled InAs quantum dots embedded in an InP matrix. Illumination with photons of energy higher than about 0.86 eV efficiently loads the dots with a maximum of about 1 hole/dot. The spectral response at lower photon energy is strongly enhanced at elevated temperatures. We present a detailed balance model for the dots and discuss the thermally assisted optical excitation processes pertinent to hole accumulation. We also show that these processes make the dots act as nanometer-scaled temperature-dependent current generators.
Department/s
Publishing year
2002
Language
English
Publication/Series
Physical Review B (Condensed Matter and Materials Physics)
Volume
65
Issue
7
Document type
Journal article
Publisher
American Physical Society
Topic
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Other
- ISSN: 1098-0121