Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides
Author
Summary, in English
Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption. (C) 2011 American Institute of Physics. [doi:10.1063/1.3596702]
Department/s
Publishing year
2011
Language
English
Publication/Series
Applied Physics Letters
Volume
98
Issue
23
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Natural Sciences
- Physical Sciences
Status
Published
ISBN/ISSN/Other
- ISSN: 0003-6951