Wrap-gated InAs nanowire field-effect transistor
Author
Summary, in English
Publishing year
2005
Language
English
Pages
273-276
Publication/Series
International Electron Devices Meeting 2005
Document type
Conference paper
Publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
Topic
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics
Keywords
- optical lithography
- lattice constants
- 0.15 V
- InAs
- heterostructures design
- lateral strain relaxation
- drain induced barrier lowering
- gate coupling
- semiconductor nanowires
- wrap gated nanowire
- field effect transistor
Conference name
International Electron Devices Meeting 2005
Conference date
2005-12-05 - 2005-12-07
Conference place
Washington, DC, United States
Status
Published
ISBN/ISSN/Other
- ISBN: 0-7803-9268-X