The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

GaAs-MnAs nanowires

På svenska

Author

  • Janusz Sadowski
  • Aloyzas Siusys
  • Andras Kovacs
  • Takeshi Kasama
  • Rafal E. Dunin-Borkowski
  • Tomasz Wojciechowski
  • Anna Reszka
  • Bogdan Kowalski

Summary, in English

Different strategies for obtaining nanowires (NWs) with ferromagnetic properties using the molecular beam epitaxy (MBE) grown nanostructures combining GaAs and Mn were investigated. Four types of structures have been studied: (i) self-catalyzed GaAs: Mn NWs grown at low temperatures on GaAs(100) substrates; (ii) GaAs: Mn NWs grown at high temperatures on Si(100) substrates; (iii) GaAs-GaMnAs core-shell NW structures; (iv) GaAs-MnAs core-shell NW structures grown on Si(100). Structures of types (i), (iii), and (iv) exhibit ferromagnetic properties. Right: Scanning electron microscopy image of Mn doped GaAs NWs with Ga droplets at the tops, grown by MBE on oxidized Si(100) substrate in the autocatalytic growth mode. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Department/s

Publishing year

2011

Language

English

Pages

1576-1580

Publication/Series

Physica Status Solidi. B: Basic Research

Volume

248

Issue

7

Document type

Journal article

Publisher

John Wiley & Sons Inc.

Topic

  • Natural Sciences
  • Physical Sciences

Keywords

  • ferromagnetic semiconductors
  • molecular beam epitaxy
  • nanowires

Status

Published

ISBN/ISSN/Other

  • ISSN: 0370-1972