The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Porous silicon as a neural electrode material.

Author

Summary, in English

The electrical properties of the solid state/fluid (Ringer solution) interface for phosphorous- and boron-doped porous silicon are reported and the benefits of using porous silicon as neural recording electrodes are discussed. The impedance, reactance and resistance for doped porous and planar silicon, in Ringer solution, were compared to gold electrodes. Planar silicon displayed approximately a three times higher reactance than porous electrodes. The phosphorous-doped porous electrodes displayed a similar reactance compared to the gold electrodes.

Publishing year

2007

Language

English

Pages

1301-1308

Publication/Series

Journal of Biomaterials Science. Polymer Edition

Volume

18

Issue

10

Document type

Journal article

Publisher

VSP BV

Topic

  • Neurosciences

Status

Published

Research group

  • Neural Interfaces

ISBN/ISSN/Other

  • ISSN: 0920-5063