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X-ray measurements of the strain and shape of dielectric/metallic wrap-gated InAs nanowires

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Author

Summary, in English

Wrap-gate (111) InAs nanowires (NWs) were studied after HfO2 dielectric coating and Cr metallic deposition by a combination of grazing incidence x-ray techniques. In-plane and out-of-plane x-ray diffraction (crystal truncation rod analysis) allow determining the strain tensor. The longitudinal contraction, increasing with HfO2 and Cr deposition, is significantly larger than the radial dilatation. For the Cr coating, the contraction along the growth axis is quite large (-0.95%), and the longitudinal/radial deformation ratio is >10, which may play a role on the NW transport properties. Small angle x-ray scattering shows a smoothening of the initial hexagonal bare InAs NW shape and gives the respective core/shell thicknesses, which are compared to flat surface values.

Publishing year

2009

Language

English

Publication/Series

Applied Physics Letters

Volume

94

Issue

13

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics

Keywords

  • X-ray diffraction
  • nanotechnology
  • indium compounds
  • III-V semiconductors
  • compounds
  • hafnium
  • dielectric materials
  • deformation
  • chromium
  • coatings
  • semiconductor heterojunctions
  • nanowires

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951