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Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires

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Author

Summary, in English

We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter approximate to 30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with no tip present are difficult to decipher. Using the SGM tip as a charged movable gate, we are able to identify three quantum dots along the nanowire: the grown-in quantum dot and an additional quantum dot near each metal lead. The SGM conductance images are used to disentangle information about individual quantum dots and then to characterize each quantum dot using spatially resolved energy-level spectroscopy. S Online supplementary data available from stacks.iop.org/Nano/22/185201/mmedia

Publishing year

2011

Language

English

Publication/Series

Nanotechnology

Volume

22

Issue

18

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 0957-4484