Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices

Summary, in English

The effect of various doping profiles on the electronic transport in GaSb/InAs(Sb) nanowire tunnel diodes is investigated. Zn-doping of the GaSb segment increases both the peak current density and the current level in reverse bias. Top-gated diodes exhibit peak current modulation with a threshold voltage which can be controlled by Zn-doping the InAs(Sb) segment. By intentionally n-doping the InAs(Sb) segment degenerate doping on both sides of the heterojunction can be achieved, as well as tunnel diodes with peak current of 420 kA/cm(2) at V-DS = 0.16V and a record-high current density of 3.6 MA/cm(2) at V-DS = -0.5V. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739082]

• Author: Mattias Borg; Martin Ek; Bahram Ganjipour; Anil Dey; Kimberly Dick Thelander; Lars-Erik Wernersson; Claes Thelander
• Department/s: Solid State Physics; Centre for Analysis and Synthesis; Department of Electrical and Information Technology; NanoLund: Centre for Nanoscience
• Publishing year: 2012
• Language: English
• Publication/Series: Applied Physics Letters
• Volume: 101
• Issue: 4
• Full text: - 1 MB; Download statistics
• Links: http://dx.doi.org/10.1063/1.4739082
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering; Condensed Matter Physics
• Status: Published
• ISBN/ISSN/Other: ISSN: 0003-6951