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Semiconductor nanowires for novel one-dimensional devices

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Author

Summary, in English

Low-dimensional semiconductors offer interesting physical phenomena but also the possibility to realize novel types of devices based on, for instance, ID structures. By using traditional top-down fabrication methods the performance of devices is often limited by the quality of the processed device structures. In many cases damage makes ultra-small devices unusable. In this work we present a recently developed method for bottom-up fabrication of epitaxially nucleated semiconductor nanowires based on metallic nanoparticle-induced formation of self-assembled nanowires. Further development of the vapor-liquid-solid growth method have made it possible to control not only the dimension and position of nanowires but also to control heterostructures formed inside the nanowires. Based on these techniques we have realized a series of transport devices such as resonant tunneling and single-electron transistors but also optically active single quantum dots positioned inside nanowires displaying sharp emission characteristics due to excitons. (C) 2003 Elsevier B.V. All rights reserved.

Publishing year

2004

Language

English

Pages

560-567

Publication/Series

Physica E: Low-Dimensional Systems and Nanostructures

Volume

21

Issue

2-4

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics
  • Chemical Sciences

Keywords

  • Resonant tunneling
  • Nanowire
  • Quantum dot
  • Heterostructure
  • Coulomb blockade

Status

Published

ISBN/ISSN/Other

  • ISSN: 1386-9477