High Current Density InAsSb/GaSb Tunnel Field Effect Transistors

Summary, in English

Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest

due to their potential for low power operation at room temperature. The devices are based on inter-band

tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse

the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band

tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density

(Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb

heterostructure nanowires to operate as TFETs. We present device characterization of InAs 0.85 Sb 0.15 /GaSb

nanowire TFETs, which exhibit record-high on-current levels.

• Author: Anil Dey; Mattias Borg; Bahram Ganjipour; Martin Ek; Kimberly Dick Thelander; Erik Lind; Peter Nilsson; Claes Thelander; Lars-Erik Wernersson
• Department/s: Department of Electrical and Information Technology; Solid State Physics; Centre for Analysis and Synthesis; NanoLund: Centre for Nanoscience
• Publishing year: 2012
• Language: English
• Pages: 205-206
• Publication/Series: Device research conference
• Full text: - 276 kB; Download statistics
• Links: http://dx.doi.org/10.1109/DRC.2012.6257038
• Document type: Conference paper
• Publisher: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering
• Keywords: Tunneling Field-Effect Transistors; Broken gap; InAs; GaSb
• Conference name: 70th Annual Device Research Conference (DRC)
• Conference date: 2012-06-18
• Status: Published
• ISBN/ISSN/Other: ISSN: 1548-3770