The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Electron transport in InAs nanowires and heterostructure nanowire devices

På svenska

Author

Summary, in English

Nanowires in the InAs/InP material system are grown with catalyst-assisted chemical beam epitaxy. Ohmic contacts are then fabricated to selected wires, allowing electron transport measurements to be carried out at room-temperature as well as at low T. InAs nanowires show strong quantum confinement effects, where thin wires (<30nm) are depleted from carriers. Measurements on InAs wires with a quantum point contact configuration indicate a scattering length in the order of 100 nm. Heterostructure barriers of InP are also incorporated into InAs wires to produce resonant tunneling diodes and single-electron transistors (SETs) with different dot lengths. Wires containing dots with a length of 100 nm function as ideal SETs, whereas the transport in wires with 15 nm long dots is strongly governed by quantum confinement and resonant tunneling. For the smaller dots it is possible to observe electron transport through excited states. (C) 2004 Elsevier Ltd. All rights reserved.

Publishing year

2004

Language

English

Pages

573-579

Publication/Series

Solid State Communications

Volume

131

Issue

9-10

Document type

Journal article

Publisher

Pergamon Press Ltd.

Topic

  • Chemical Sciences
  • Condensed Matter Physics

Keywords

  • A. Semiconductors
  • A. Nanostructures
  • B. Crystal growth
  • D. Electronic transport

Status

Published

ISBN/ISSN/Other

  • ISSN: 1879-2766