The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Heterogeneous integration of InAs on W/GaAs by MOVPE

Author

Summary, in English

InAs has been grown on W-GaAs patterned substrates using MOVPE. The selectivity of the growth and the nucleation process has been studied as a function of the temperature and the V/III-ratio in the MOVPE reactor. It is shown that the W guides the nucleation of the InAs on the GaAs and that the islands formed may be used to embed metal features in a hybride InAs/GaAs structure in agreement with previous overgrowth studies of W-InAs and W-GaAs. The electrical properties has also been evaluated demonstrating a reduction of resistance by a factor 5 for a hybride structure with an embedded grating as compared to an InAs/GaAs reference sample.

Publishing year

2008

Language

English

Pages

042043-042043

Publication/Series

Journal of Physics: Conference Series

Volume

100

Document type

Conference paper

Publisher

IOP Publishing

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Conference name

17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology

Conference date

2007-07-02 - 2007-07-06

Conference place

Stockholm, Sweden

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 1742-6588
  • ISSN: 1742-6596