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Growth of one-dimensional nanostructures in MOVPE

Author

Summary, in English

The use of metal organic vapor-phase epitaxy (MOVPE) for growth of one-dimensional nanostructures in the material systems GaAs, GaP, InAs and InP is investigated. Some kinetic effects are discussed, especially the general finding that in MOVPE thinner whiskers grow faster than thicker whiskers. Effects of growth temperature on growth rate and shape of the whiskers, the effects of different growth directions on the perfection of the materials and the possibilities to grow heterostructures in axial and lateral directions are reported. Ways to overcome the randomness in whisker growth by controlled seeding of the Au particles and by using lithography for site control are demonstrated.

Publishing year

2004

Language

English

Pages

211-220

Publication/Series

Journal of Crystal Growth

Volume

272

Issue

1-4

Document type

Journal article

Publisher

Elsevier

Topic

  • Chemical Sciences
  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 0022-0248