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Measurements of the band gap of wurtzite InAs1−xPx nanowires using photocurrent spectroscopy

Author

Summary, in English

We report measurements of the band gap of InAs1−xPx nanowires having wurtzite crystal structure

as a function of the composition for 0.14<x<0.48. The band gap is measured by photocurrent

spectroscopy on single InAs nanowires with a centrally placed InAs1−xPx segment. The photocurrent

measurements are performed at a temperature of 5 K. The data fit well with a quadratic dependence

of the band gap on the composition. Using a bowing parameter of 0.2 eV the extracted values for

the band gaps are 0.54 eV for InAs and 1.65 eV for InP. These values are larger than the

corresponding zinc blende band gaps. We attribute this increase to the fact that the crystal structure

is wurtzite rather than zinc blende

Publishing year

2007

Language

English

Publication/Series

Applied Physics Reviews

Volume

101

Issue

12

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics
  • Chemical Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 1931-9401