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Low power multi-band CMOS receiver front-end

Author

Summary, in English

A Multi-band CMOS front-end was designed and fabricated in a 0.13μm CMOS process. The front-end employs a common-gate low noise amplifier (LNA) with

capacitive cross coupling (CCC) technique and a double balanced mixer. The band selection is performed by switching capacitors in and out of the LNA load, changing the resonance frequencies ranging from 2.5GHz to 4.5GHz in

16 different frequency bands. The measured noise figure is from 2.8dB in the higher bands to 4dB in lower bands. The conversion gain ranges from 20dB in the higher bands down to 14.5dB in the lower bands, and the third order intercept point (IIP3) is above -14dBm. The input matching S11 is well

below -10dB at all frequencies. The front-end draws 3.85mA from a 1.2V power supply.

Publishing year

2010

Language

English

Publication/Series

[Host publication title missing]

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • capacitive crosscoupling
  • multi-band
  • LNA
  • mixer

Conference name

PRIME 2010, 6th Conference on Ph.D. Research in Microelectronics & Electronics

Conference date

2010-07-18 - 2010-07-21

Conference place

Berlin, Germany

Status

Published

Research group

  • Elektronikkonstruktion
  • Analog RF
  • Data converters & RF