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A 15 GHz and a 20 GHz low noise amplifier in 90 nm RF CMOS

Author

  • Lars Aspemyr
  • Harald Jacobsson
  • Mingquan Bao
  • Henrik Sjöland
  • Mattias Ferndal
  • G Carchon

Summary, in English

The design and measured performance of two low-noise amplifiers at 15 GHz and 20 GHz realized in a 90 nm RF-CMOS process are presented in this work. The 15 GHz LNA achieves a power gain of 12.9 dB, a noise figure of 2.0 dB and an input referred third-order intercept point (IIP3) of -2.3 dBm. The 20 GHz LNA has a power gain of 8.6 dB, a noise figure of 3.0 dB and an IIP3 of 5.6 dBm. Compared to previously reported designs, these two LNAs show lower noise figure at lower power consumption.

Publishing year

2006

Language

English

Pages

387-390

Publication/Series

Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Document type

Conference paper

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Status

Published

Research group

  • Elektronikkonstruktion

ISBN/ISSN/Other

  • ISBN: 0-7803-9472-0