A 15 GHz and a 20 GHz low noise amplifier in 90 nm RF CMOS
Author
Summary, in English
The design and measured performance of two low-noise amplifiers at 15 GHz and 20 GHz realized in a 90 nm RF-CMOS process are presented in this work. The 15 GHz LNA achieves a power gain of 12.9 dB, a noise figure of 2.0 dB and an input referred third-order intercept point (IIP3) of -2.3 dBm. The 20 GHz LNA has a power gain of 8.6 dB, a noise figure of 3.0 dB and an IIP3 of 5.6 dBm. Compared to previously reported designs, these two LNAs show lower noise figure at lower power consumption.
Publishing year
2006
Language
English
Pages
387-390
Publication/Series
Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Full text
- Available as PDF - 358 kB
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Document type
Conference paper
Topic
- Electrical Engineering, Electronic Engineering, Information Engineering
Status
Published
Research group
- Elektronikkonstruktion
ISBN/ISSN/Other
- ISBN: 0-7803-9472-0