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Vertical high-mobility wrap-gated InAs nanowire transistor

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Author

Summary, in English

In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 x 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V-ds = 0.15 V (V-g = 0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.

Publishing year

2006

Language

English

Pages

323-325

Publication/Series

IEEE Electron Device Letters

Volume

27

Issue

5

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • field-effect transistor (FET)
  • wrap gate
  • nanowires
  • InAs

Status

Published

ISBN/ISSN/Other

  • ISSN: 0741-3106