Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
Author
Summary, in English
By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large difference of the barrier height between Ti and Au.
Publishing year
2002
Language
English
Pages
1433-1440
Publication/Series
Solid-State Electronics
Volume
46
Issue
9
Document type
Journal article
Publisher
Elsevier
Topic
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Keywords
- image force
- silicon carbide
- nano-particles
- Schottky barrier height
- lowering
Status
Published
ISBN/ISSN/Other
- ISSN: 0038-1101