Semiconductor nanowires for 0D and 1D physics and applications

Summary, in English

During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.

• Author: Lars Samuelson; Claes Thelander; Mikael Björk; Magnus Borgström; Knut Deppert; Kimberly Dick Thelander; Adam Hansen; Thomas Mårtensson; Nikolay Panev; Ann Persson; Werner Seifert; Niklas Sköld; Magnus Larsson; Reine Wallenberg
• Department/s: Solid State Physics; Centre for Analysis and Synthesis
• Publishing year: 2004
• Language: English
• Pages: 313-318
• Publication/Series: Physica E: Low-Dimensional Systems and Nanostructures
• Volume: 25
• Issue: 2-3
• Links: http://dx.doi.org/10.1016/j.physe.2004.06.030
• Document type: Journal article
• Publisher: Elsevier
• Topic: Chemical Sciences; Condensed Matter Physics
• Keywords: Nanowires; Quantum confinement; Single-electron tunneling 68.65.−k; 78.67.Lt; 73.63.−b; 73.23.Hk; Heterostructures
• Status: Published
• ISBN/ISSN/Other: ISSN: 1386-9477