One dimensional heterostructures and resonant tunneling in III-V nanowires

Summary, in English

We use a bottom-up approach to grow epitaxially nucleated semiconductor nanowires from gold particles. Heterostructure barriers of InP are introduced inside InAs nanowires to form resonant tunneling diodes and single-electron transistors

• Author: Claes Thelander; Jonas Ohlsson; Mikael Björk; Thomas Mårtensson; Ann Persson; Knut Deppert; Marcus Larsson; Reine Wallenberg; Lars Samuelson
• Department/s: Solid State Physics; Centre for Analysis and Synthesis
• Publishing year: 2003
• Language: English
• Pages: 151-152
• Publication/Series: 2003 International Symposium on Compound Semiconductors (Cat. No.03TH8675)
• Links: http://dx.doi.org/10.1109/ISCS.2003.1239951
• Document type: Conference paper
• Publisher: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Topic: Condensed Matter Physics
• Keywords: III-V nanowires; GaAs; one dimensional heterostructures; epitaxially nucleated semiconductor nanowires growth; InP; gold particles; InP heterostructure barriers; InAs; resonant tunneling diodes; single electron transistors
• Conference name: IEEE International Symposium on Compound Semiconductors
• Conference date: 2003-08-25 - 2003-08-27
• Conference place: San Diego, CA, United States
• Status: Published
• ISBN/ISSN/Other: ISBN: 0-7803-7820-2