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Tunable double quantum dots in InAs nanowires defined by local gate electrodes

Author

Summary, in English

We report on low-temperature transport measurements on single and double quantum dots defined using local gates to electrostatically deplete InAs nanowires grown by chemical beam epitaxy. This technique allows us to define multiple quantum dots along a semiconducting nanowire and tune the coupling between them.

Publishing year

2005

Language

English

Pages

1487-1490

Publication/Series

Nano Letters

Volume

5

Issue

7

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 1530-6992