Tunable double quantum dots in InAs nanowires defined by local gate electrodes
Author
Summary, in English
We report on low-temperature transport measurements on single and double quantum dots defined using local gates to electrostatically deplete InAs nanowires grown by chemical beam epitaxy. This technique allows us to define multiple quantum dots along a semiconducting nanowire and tune the coupling between them.
Department/s
Publishing year
2005
Language
English
Pages
1487-1490
Publication/Series
Nano Letters
Volume
5
Issue
7
Document type
Journal article
Publisher
The American Chemical Society (ACS)
Topic
- Nano Technology
Status
Published
ISBN/ISSN/Other
- ISSN: 1530-6992