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Nanowire-based multiple quantum dot memory

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Author

Summary, in English

The authors propose and demonstrate an alternative memory concept in which a storage island is connected to a nanowire containing a stack of nine InAs quantum dots, each separated by thin InP tunnel barriers. Transport through the quantum dot structure is suppressed for a particular biasing window due to misalignment of the energy levels. This leads to hysteresis in the charging/discharging of the storage island. The memory operates for temperatures up to around 150 K and has write times down to at least 15 ns. A comparison is made to a nanowire memory based on a single, thick InP barrier.

Publishing year

2006

Language

English

Publication/Series

Applied Physics Letters

Volume

89

Issue

16

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics
  • Chemical Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951