Defect-free InP nanowires grown in [001] direction on InP(001)

Summary, in English

We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas <111>B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.

• Author: U Krishnamachari; Magnus Borgström; Jonas Ohlsson; Nikolay Panev; Lars Samuelson; Werner Seifert; Magnus Larsson; Reine Wallenberg
• Department/s: Solid State Physics; Centre for Analysis and Synthesis
• Publishing year: 2004
• Language: English
• Pages: 2077-2079
• Publication/Series: Applied Physics Letters
• Volume: 85
• Issue: 11
• Links: http://dx.doi.org/10.1063/1.1784548
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Chemical Sciences; Condensed Matter Physics
• Status: Published
• ISBN/ISSN/Other: ISSN: 0003-6951