Defect-free InP nanowires grown in [001] direction on InP(001)
Author
Summary, in English
We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas <111>B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.
Publishing year
2004
Language
English
Pages
2077-2079
Publication/Series
Applied Physics Letters
Volume
85
Issue
11
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Chemical Sciences
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Other
- ISSN: 0003-6951